IPN65R1K5CE - MOSFET

Datasheet Summary

Features

Extremely low losses due to very low FOM Rdson.
Qg and Eoss.
Very high commutation ruggedness.
Easy to use/drive.
Pb-free plating, Halogen free mold compound.
Qualified for standard grade.

Infineon

📥 Download Datasheet

Datasheet Details

Part number	IPN65R1K5CE
Manufacturer	Infineon
File Size	1.01 MB
Description	MOSFET
Datasheet	IPN65R1K5CE Datasheet
Additional preview pages of the IPN65R1K5CE datasheet.

📁 Similar Datasheet

IPN10EL-S - PN Half Bridge Driver IC (Infineon Technologies)
IPN1M50T-H - SLLIMM-nano small low-loss intelligent molded module IPM (STMicroelectronics)
IPN2M50-H - SLLIMM-nano small low-loss intelligent molded module IPM (STMicroelectronics)
IPN2M50T-H - SLLIMM-nano small low-loss intelligent molded module IPM (STMicroelectronics)
IPN2M50T-HL - SLLIMM-nano small low-loss intelligent molded module IPM (STMicroelectronics)

Other Datasheets by Infineon

IPN60R1K0CE - MOSFET
IPN60R1K5CE - MOSFET
IPN60R2K1CE - MOSFET
IPN60R360PFD7S - 600V MOSFET
IPN60R3K4CE - MOSFET
IPN60R600P7S - Power-Transistor
IPN50R1K4CE - MOSFET
IPN50R2K0CE - MOSFET

Full PDF Text Transcription

Click to expand full text

IPN65R1K5CE MOSFET 650VCoolMOSªCEPowerTransistor CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™CEisa price-performanceoptimizedplatformenablingtotargetcostsensitive applicationsinConsumerandLightingmarketsbystillmeetinghighest efficiencystandards.Thenewseriesprovidesallbenefitsofafast switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand offeringthebestcostdownperformanceratioavailableonthemarket.

Published: Dec 16, 2016 |