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IPP011N04NF2S Final datasheet
MOSFET
StrongIRFET™2 Power‑Transistor, 40 V
Features
• Optimized for wide range of applications • N‑channel, normal level • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21
Product validation
Qualified according to JEDEC Standard
Table 1 Parameter VDS RDS(on),max ID Qoss QG(0V..10V)
Key Performance Parameters
Value
Unit
40
V
1.15
mΩ
201
A
233
nC
210
nC
PG‑TO220‑3
Drain Pin 2, Tab
Gate Pin 1
Source Pin 3
Type/Ordering Code IPP011N04NF2S
Package PG‑TO220‑3
Marking 011N04NS
Related Links ‑
Datasheet
https://www.infineon.com
1
Revision 2.1 2024‑10‑07
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StrongIRFET™2 Power‑Transistor, 40 V
IPP011N04NF2S
Table of Contents
Description . . . . . . . . . . . . . . . . . . . .
IPP011N04NF2S Datasheet
