Datasheet Summary
MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOSª5Power-Transistor,80V IPP023N08N5
DataSheet
Rev.2.0 Final
PowerManagement&Multimarket
1Description
Features
- Idealforhighfrequencyswitchingandsync.rec.
- ExcellentgatechargexRDS(on)product(FOM)
- Verylowon-resistanceRDS(on)
- N-channel,normallevel
- 100%avalanchetested
- Pb-freeplating;RoHSpliant
- QualifiedaccordingtoJEDEC1)fortargetapplications
- Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS 80
RDS(on),max
2.3 mΩ
ID 120 A
Qoss 156 nC
QG(0V..10V)
133 nC
OptiMOSª5Power-Transistor,80V...