Datasheet Summary
MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOSª5Power-Transistor,100V IPP023N10N5
DataSheet
Rev.2.1 Final
PowerManagement&Multimarket
OptiMOSª5Power-Transistor,100V IPP023N10N5
1Description
Features
- N-channel,normallevel
- OptimizedforFOMOSS
- Verylowon-resistanceRDS(on)
- 175°Coperatingtemperature
- Pb-freeleadplating;RoHSpliant
- QualifiedaccordingtoJEDEC1)fortargetapplication
- Idealforhigh-frequencyswitchingandsynchronousrectification
TO-220-3 tab
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS 100 V
RDS(on),max
2.3 mΩ
ID 120 A
Drain Pin 2, Tab
Gate Pin 1
Source Pin...