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IPP030N10NF2S - 100V Power Transistor

General Description

1 Maximum ratings 3 T

Key Features

  • Optimized for a wide range of.

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Public IPP030N10NF2S Final datasheet MOSFET StrongIRFET™ 2 Power‑Transistor, 100 V Features • Optimized for a wide range of applications • N‑channel, normal level • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 Product validation Qualified according to JEDEC Standard Table 1 Parameter VDS RDS(on),max ID Qoss QG Key performance parameters Value Unit 100 V 3.0 mΩ 179 A 109 nC 85 nC PG‑TO220‑3 Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Part number IPP030N10NF2S Package PG‑TO220‑3 Marking 030N10NS Related links ‑ Datasheet https://www.infineon.com 1 Revision 1.0 2025‑01‑20 Public StrongIRFET™ 2 Power‑Transistor, 100 V IPP030N10NF2S Table of contents Description . . . . . . . . . . . . . . . . . . . . . . . . .