Infineon Technologies IPP111N15N3G
Power Transistor
| Part No. | IPP111N15N3G |
|---|---|
| Datasheet | IPP111N15N3G Download |
| Manufacturer |  Infineon Technologies |
| Description | Power Transistor |
| Buy | Stock & Price |
FEATURES
● N-channel, normal level● Excellent gate charge x R DS(on) product (FOM)
● Very low on-resistance R DS(on)
● 175 °C operating temperature
● Pb-free lead plating; RoHS compliant; Halogen free
● Qualified according to JEDEC1) for target application
● Ideal for high-frequency switching and synchronous rectification
●Halogen-free according to IEC61249-2-21 Type IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G Package Marking PG-TO263-3 108N15N PG-TO220-3 111N15N PG-TO262-3 111N15N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) 2) Value 83 59 332 330 ±20 Unit A I D,pulse E AS V GS P tot T j, T stg T C=25 °C I D=83 A, R GS=25 Ω mJ V W °C T C=25 °C 214 -55 ... 175 55/175/56 J-STD20 and JESD22 See figure 3 Rev. 2.1 page 1 2009-12-01 IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G Parameter Symbol Conditions min.
