IPP50R190CE - MOSFET

Datasheet Summary

Features

Extremely low losses due to very low FOM Rdson.
Qg and Eoss.
Very high commutation ruggedness.
Easy to use/drive.
Pb-free plating, Halogen free mold compound.
Qualified for industrial grade.

Infineon

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Datasheet Details

Part number	IPP50R190CE
Manufacturer	Infineon
File Size	1.82 MB
Description	MOSFET
Datasheet	IPP50R190CE Datasheet
Additional preview pages of the IPP50R190CE datasheet.

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Full PDF Text Transcription

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IPW50R190CE,IPP50R190CE MOSFET 500VCoolMOSªCEPowerTransistor CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™CEseriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation whilerepresentingacostappealingalternativecomparedtostandard MOSFETsintargetapplications.Theresultingdevicesprovideallbenefits ofafastswitchingSJMOSFETwhilenotsacrificingeaseofuse. Extremelylowswitchingandconductionlossesmakeswitching applicationsevenmoreefficient,morecompact,lighterandcooler.

Published: Mar 2, 2016 |