IPS60R210PFD7S Datasheet | Infineon

Overview

• ExtremelylowlossesduetoverylowFOMRDS(on)*QgandRDS(on)*Eoss
• LowswitchinglossesEoss,excellentthermalbehavior
• Fastbodydiode
• WiderangeportfolioofRDS(on)andpackagevariations Benefits
• Enableshighpowerdensitydesignsandsmallformfactors
• Enablesefficiencygainsathigherswitchingfrequencies
• Excellentcommutationruggedness
• Easytoselectrightpartsandoptimizethedesign Potentialapplications RecommendedforZVStopologiesusedinhighdensitychargers, adapters,lightingandmotordrivesapplications,etc. Productvalidation QualifiedaccordingtoJEDECStandard Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 210 mΩ Qg,typ 23 nC ID,pulse 42 A Eoss @ 400V
• 6 µJ Body diode diF/dt 1300 A/µs ESD Class (HBM) 1C - Type/OrderingCode IPS60R210PFD7S Package PG-TO 251-3 Marking 60S210D7 IPAKSL tab Drain Pin 2, Tab Gate
• 1 Pin 1 Source *1: Internal body diode Pin 3 RelatedLinks see Appendix A Final Data Sheet 1 Rev.2.0,2019-04-09 600VCoolMOSªPFD7SJPowerDevice