Datasheet Details
| Part number | IPS60R210PFD7S |
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| Manufacturer | Infineon |
| File Size | 625.42 KB |
| Description | 600V MOSFET |
| Datasheet |
 IPS60R210PFD7S Datasheet
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General Description
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Key Features
- Extremely low losses due to very low FOM RDS(on).
- Qg and RDS(on).
- Eoss.
- Low switching losses Eoss, excellent thermal behavior.
- Fast body diode.
- Wide range portfolio of RDS(on) and package variations Benefits.
- Enables high power density designs and small form factors.
- Enables efficiency gains at higher switching frequencies.
- Excellent commutation ruggedness.
- Easy to select right parts and optimize the design Potential.