Datasheet4U Logo Datasheet4U.com

IPSA70R600P7S - MOSFET

Datasheet Summary

Description

.

.

.

.

Features

  • Extremely low losses due to very low FOM RDS(on).
  • Qg and RDS(on).
  • Eoss.
  • Excellent thermal behavior.
  • Integrated ESD protection diode.
  • Low switching losses (Eoss).
  • Product validation acc. JEDEC Standard Benefits.
  • Cost competitive technology.
  • Lower temperature.
  • High ESD ruggedness.
  • Enables efficiency gains at higher switching frequencies.
  • Enables high power density designs and small form factors Potenti.

📥 Download Datasheet

Datasheet preview – IPSA70R600P7S

Datasheet Details

Part number IPSA70R600P7S
Manufacturer Infineon
File Size 865.56 KB
Description MOSFET
Datasheet download datasheet IPSA70R600P7S Datasheet
Additional preview pages of the IPSA70R600P7S datasheet.

📁 Similar Datasheet

  • IPS-250 - Spqnnungswandler (Battcenter)
  • IPS-265 - Low Cost K-Band Transceiver (InnoSenT)
  • IPS-BN0703601 - LCD (InferPoint)
  • IPS-DDK - Driver Development Kit (Zoran Corporation)
  • IPS0151 - FULLY PROTECTED POWER MOSFET SWITCH (International Rectifier)
  • IPS0151S - FULLY PROTECTED POWER MOSFET SWITCH (International Rectifier)
  • IPS021 - FULLY PROTECTED POWER MOSFET SWITCH (International Rectifier)
  • IPS021L - FULLY PROTECTED POWER MOSFET SWITCH (International Rectifier)
  • IPS021S - FULLY PROTECTED POWER MOSFET SWITCH (International Rectifier)
  • IPS022G - DUAL FULLY PROTECTED POWER MOSFET SWITCH (International Rectifier)
Other Datasheets by Infineon

Full PDF Text Transcription

Click to expand full text
IPSA70R600P7S MOSFET 700VCoolMOSªP7PowerTransistor CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies. ThelatestCoolMOS™P7isanoptimizedplatformtailoredtotargetcost sensitiveapplicationsinconsumermarketssuchascharger,adapter, lighting,TV,etc. ThenewseriesprovidesallthebenefitsofafastswitchingSuperjunction MOSFET,combinedwithanexcellentprice/performanceratioandstateof theartease-of-uselevel.Thetechnologymeetshighestefficiency standardsandsupportshighpowerdensity,enablingcustomersgoing towardsveryslimdesigns.
Published: |