IPSA70R600P7S Datasheet | Infineon

Features - Extremelylowlossesduetoverylow FOMRDS(on)- Qgand RDS(on)- Eoss - Excellentthermalbehavior - Integrated ESDprotectiondiode - Lowswitchinglosses(Eoss) - Productvalidationacc.JEDECStandard Benefits - Costpetitivetechnology - Lowertemperature - High ESDruggedness - Enablesefficiencygainsathigherswitchingfrequencies - Enableshighpowerdensitydesignsandsmallformfactors Potentialapplications Remendedfor Flybacktopologiesforexampleusedin Chargers, Adapters,Lighting Applications,etc. Pleasenote:For MOSFETparallelingtheuseofferritebeadsonthegate orseperatetotempolesisgenerallyremended. IPAK-shortleadwith ISO-Standoff Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Table1Key Performance Parameters Parameter Value Unit VDS @ Tj=25°C RDS(on),max 700 0.6 V Ω Qg,typ 10.5 n C ID,pulse Eoss @ 400V µJ V(GS)th,typ ESD class (HBM) 2 Type/Ordering Code IPSA70R600P7S Package PG-TO 251 Marking 70S600P7 Related Links see Appendix A Final Data...