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IPT023N10NM5LF2 - 100V MOSFET

General Description

1 Maximum ratings 3 T

Key Features

  • Ideal for hot‑swap and e‑fuse.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Public IPT023N10NM5LF2 Final datasheet MOSFET OptiMOS™ 5 Linear FET 2, 100 V Features • Ideal for hot‑swap and e‑fuse applications • Very low on‑resistance RDS(on) • Wide safe operating area SOA • N‑channel, normal level • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 Product validation Fully qualified according to JEDEC for Industrial Applications Table 1 Key Performance Parameters Parameter Value Unit VDS 100 V RDS(on),max 2.3 mΩ ID 243 A Ipulse (VDS=56 V, tp=10 ms) 5.5 A TOLL tab 12 34 5 678 87654 321 Drain Tab Gate Pin 1 Source Pin 2-8 Type/Ordering Code IPT023N10NM5LF2 Package PG‑HSOF‑8 Marking 23N10LF2 Related Links ‑ Datasheet https://www.infineon.com 1 Revision 1.