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IPT059N15N3 - MOSFET

Key Features

  • N-channel, normal level.
  • Excellent gate charge x RDS(on) product (FOM).
  • Very low on-resistance RDS(on).
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC 1) for target.

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Full PDF Text Transcription for IPT059N15N3 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IPT059N15N3. For precise diagrams, and layout, please refer to the original PDF.

MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSª3Power-Transistor,150V IPT059N15N3 DataSheet Rev.2.1 Final PowerManagement&Multimarket ...

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IPT059N15N3 DataSheet Rev.2.1 Final PowerManagement&Multimarket OptiMOSª3Power-Transistor,150V IPT059N15N3 1Description Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchronousrectification •Halogen-freeaccordingtoIEC61249-2-21 HSOF 12345 678 Tab Table1KeyPerformanceParameters Parameter Value Unit VDS 150 V RDS(on),max 5.

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