IPT059N15N3 - MOSFET

Features

N-channel, normal level.
Excellent gate charge x RDS(on) product (FOM).
Very low on-resistance RDS(on).
175 °C operating temperature.
Pb-free lead plating; RoHS compliant.
Qualified according to JEDEC 1) for target.

Infineon

Datasheet Details

Part number	IPT059N15N3
Manufacturer	Infineon
File Size	963.28 KB
Description	MOSFET
Datasheet	IPT059N15N3 Datasheet
Additional preview pages of the IPT059N15N3 datasheet.

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Full PDF Text Transcription

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MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSª3Power-Transistor,150V IPT059N15N3 DataSheet Rev.2.1 Final PowerManagement&Multimarket OptiMOSª3Power-Transistor,150V IPT059N15N3 1Description Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchronousrectification •Halogen-freeaccordingtoIEC61249-2-21 HSOF 12345 678 Tab Table1KeyPerformanceParameters Parameter Value Unit VDS 150 V RDS(on),max 5.

Published: Dec 19, 2016 |