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MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOSTMPower-MOSFET,30V IPT004N03L
DataSheet
Rev.2.0 Final
PowerManagement&Multimarket
1Description
Features
•Optimizedfore-fuseandORingapplication •Verylowon-resistanceRDS(on)@VGS=4.5V •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS 30
V
RDS(on),max
0.4
mΩ
ID 300 A
QOSS
141
nC
QG(0V..
IPT004N03L Datasheet
