IPT012N06N
IPT012N06N is 60V MOSFET manufactured by Infineon.
MOSFET
OptiMOSTMPower-Transistor,60V
Features
- 100%avalanchetested
- Superiorthermalresistance
- N-channel
- QualifiedaccordingtoJEDEC1)fortargetapplications
- Pb-freeleadplating;RoHSpliant
- Halogen-freeaccordingtoIEC61249-2-21
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Table1KeyPerformanceParameters
Parameter
Value
Unit
RDS(on),max
1.2 mΩ
Qoss
119 nC
QG(0V..10V)
106 nC
HSOF Tab
12345 678
Drain Tab
Gate Pin 1
Source Pin 2-8
Type/OrderingCode IPT012N06N
Package PG-HSOF-8
Marking 012N06N
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