Datasheet4U Logo Datasheet4U.com

IPT012N08N5 - 80V MOSFET

General Description

1 Maximum ratings 3 T

Key Features

  • Ideal for high frequency switching and sync. rec.
  • Excellent gate charge x RDS(on) product (FOM).
  • Very low on‑resistance RDS(on).
  • N‑channel, normal level.
  • 100% avalanche tested.
  • Pb‑free plating; RoHS compliant.
  • Qualified according to JEDECJ‑STD20 and JESD22 for target.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IPT2601 USB Dedicated Fast-Charging Port Controller FUMAN
IPT2602 USB fast charging port controller ChipSourceTek

Other Datasheets by Infineon

Part Number Description
IPT012N06N 60V MOSFET
IPT010N08NM5 80V MOSFET
IPT013N08NM5LF 80V MOSFET
IPT014N08NM5 80V MOSFET
IPT015N10N5 MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Public IPT012N08N5 Final datasheet MOSFET OptiMOS™ 5 Power‑Transistor, 80 V Features • Ideal for high frequency switching and sync. rec. • Excellent gate charge x RDS(on) product (FOM) • Very low on‑resistance RDS(on) • N‑channel, normal level • 100% avalanche tested • Pb‑free plating; RoHS compliant • Qualified according to JEDECJ‑STD20 and JESD22 for target applications • Halogen‑free according to IEC61249‑2‑21 Product validation Qualified for industrial applications according to the relevant tests of JEDEC JESD47, JESD22 and J‑STD‑020. Table 1 Parameter VDS RDS(on),max ID Qoss QG(0V..10V) Key performance parameters Value Unit 80 V 1.