IPT012N08N5
IPT012N08N5 is 80V MOSFET manufactured by Infineon.
Public
IPT012N08N5 Final datasheet
MOSFET
OptiMOS™ 5 Power‑Transistor, 80 V
Features
- Ideal for high frequency switching and sync. rec.
- Excellent gate charge x RDS(on) product (FOM)
- Very low on‑resistance RDS(on)
- N‑channel, normal level
- 100% avalanche tested
- Pb‑free plating; RoHS pliant
- Qualified according to JEDECJ‑STD20 and JESD22 for target applications
- Halogen‑free according to IEC61249‑2‑21
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC JESD47, JESD22 and J‑STD‑020.
Table 1 Parameter VDS RDS(on),max ID Qoss QG(0V..10V)
Key performance parameters
Value
Unit
1.2 mΩ
208 nC
178 nC
TOLL tab
12...
