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IPT010N08NM5 - 80V MOSFET

General Description

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Key Features

  • N-channel, normal level.
  • Very low on-resistance RDS(on).
  • Ideal for high frequency switching and sync. rec.
  • 100% avalanche tested.
  • Excellent gate charge x RDS(on) product (FOM).
  • Pb-free lead plating; RoHS compliant.
  • Halogen-free according to IEC61249-2-21 Product validation Fully qualified according to JEDEC for Industrial.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IPT010N08NM5 MOSFET OptiMOSTM5Power-Transistor,80V Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •Idealforhighfrequencyswitchingandsync.rec. •100%avalanchetested •ExcellentgatechargexRDS(on)product(FOM) •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS 80 V RDS(on),max 1.05 mΩ ID 425 A Qoss 207 nC QG 178 nC HSOF Tab 12345 678 Drain Tab Gate Pin 1 Source Pin 2-8 Type/OrderingCode IPT010N08NM5 Package PG-HSOF-8 Marking 010N08N5 RelatedLinks - Final Data Sheet 1 Rev.2.