IPT067N20NM6 Datasheet 200V MOSFET

Manufacturer: Infineon

Datasheet Details

IPT067N20NM6 MOSFET OptiMOSTM6Power-Transistor,200V.

N-channel, normal level.
Very low on-resistance RDS(on).
Excellent gate charge x RDS(on) product (FOM).
Very low reverse recovery charge (Qrr).
High avalanche energy rating.
175°C operating temperature.
Pb-free lead plating; RoHS compliant.
Halogen-free according to IEC61249-2-21.
MSL 1 classified according to J-STD-020.
100% avalanche tested Product validation Fully qualified according to JEDEC for Indus.