IPT65R033G7
IPT65R033G7 is MOSFET manufactured by Infineon.
Features
- C7Goldgivesbestinclass FOMRDS(on)- Eossand RDS(on)- Qg.
- C7Goldtechnologyenablesbestinclass RDS(on)insmallestfootprint.
- TOLLpackagehasinbuilt4thpin Kelvin Sourceconfigurationandlow parasiticsourceinductance(~1n H).
- TOLLpackageis MSL1pliant,total Pb-freeandhaseasyvisual inspectiongroovedleads.
- TOLLSMDpackagebinedwithleadfreedieattachprocessenables improvedthermalperformance Rth.
Benefits
- C7Gold FOMRDS(on)- Qgis14%betterthanprevious C7650Venabling fasterswitchingleadingtohigherefficiency.
- C7Goldcanreach33mΩinin TOLL115mm2footprint,whereasprevious BICC7650Vwas45mΩin150mm2D2PAKfootprint.
- Reducingparasiticsourceinductanceby Kelvin Sourceimproves efficiencybyfasterswitchingandeaseofuseduetolessringing.
- TOLLpackageiseasytouseandhasthehighestqualitystandards.
- Improvedthermalsenable SMDTOLLpackagetobeusedinhigher currentdesignsthanhasbeenpreviouslypossible.
HSOF
1 2 34 5 6 7 8
Tab Tab
8 76 5 4 32 1
Drain Tab
Gate Pin 1
Driver Source Pin 2
- 1: Internal body diode
- 1
Source Pin 3-8
Potentialapplications
PFCstagesandhardswitching PWMstagesfore.g.puting,Server, Tele,UPSand Solar.
Productvalidation
Fullyqualifiedaccordingto JEDECfor Industrial Applications
Pleasenote:For MOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyremended.
Table1Key Performance Parameters
Parameter
Value
Unit
VDS @ Tj,max
RDS(on),max
33 mΩ
Qg.typ
110 n C
ID,pulse
ID,continuous @ Tj<150°C...
