IPT65R190CFD7
IPT65R190CFD7 is MOSFET manufactured by Infineon.
Features
- Ultra-fastbodydiode
- 650Vbreakdownvoltage
- Best-in-class RDS(on)
- Reducedswitchinglosses
- Low RDS(on)dependencyovertemperature
Benefits
- Excellenthardmutationruggedness
- Extrasafetymarginfordesignswithincreasedbusvoltage
- Enablingincreasedpowerdensitysolutions
- Outstandinglightloadefficiencyinindustrial SMPSapplications
- Improvedfullloadefficiencyinindustrial SMPSapplications
Potentialapplications
Optimizedforphase-shiftfull-bridge(ZVS),LLCApplications- Server, Tele,EVCharging,Solar
Productvalidation
Fullyqualifiedaccordingto JEDECfor Industrial Applications
Pleasenote:Thesourceandsensesourcepinsarenotexchangeable. Theirexchangemightleadtomalfunction.Forparalleling4pin MOSFET devicestheplacementofthegateresistorisgenerallyremendedtobe onthe Driver Sourceinsteadofthe Gate.
Drain tab
Gate Pin 1
- 1
- 2
- 1: Internal body diode
- 2: Integrated ESD diode
Power Source Pin 3-8
Driver Source Pin 2
Table1Key Performance Parameters
Parameter
Value
Unit
VDS @ Tj,max
RDS(on),max
190 mΩ
Qg,typ
22 n C
ID,pulse
Eoss @...
