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IQD009N06NM5CG - MOSFET

General Description

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Key Features

  • N-channel, normal level.
  • Very low on-resistance RDS(on).
  • Superior thermal resistance.
  • 100% avalanche tested.
  • Pb-free lead plating; RoHS compliant.
  • Halogen-free according to IEC61249-2-21 Product validation Fully qualified according to JEDEC for Industrial.

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Full PDF Text Transcription for IQD009N06NM5CG (Reference)

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IQD009N06NM5CG MOSFET OptiMOSTM5Power-Transistor,60V Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •Superiorthermalresistance •100%avalanch...

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owon-resistanceRDS(on) •Superiorthermalresistance •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS 60 V RDS(on),max 0.9 mΩ ID 445 A Qoss 127 nC QG 120 nC PG-TTFN-9 5 6 7 8 9 4 3 2 1 Drain Pin 5-8 Gate Pin 9 Source Pin 1-4 Type/OrderingCode IQD009N06NM5CG Package PG-TTFN-9 Marking 00906NC RelatedLinks - Final Data Sheet 1 Rev.2.1,2023-03-06 OptiMOSTM5Power-Transistor,60V IQD009N06NM5CG TableofContents Descri

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