Full PDF Text Transcription for IQD009N06NM5SC (Reference)
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Public IQD009N06NM5SC Final datasheet MOSFET OptiMOS™ 5 Power‑Transistor, 60 V Features • N‑channel, normal level • Very low on‑resistance RDS(on) • Superior thermal resi...
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normal level • Very low on‑resistance RDS(on) • Superior thermal resistance • Optimized design for double side cooling • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 Product validation Fully qualified according to JEDEC for Industrial Applications Table 1 Parameter VDS RDS(on),max ID Qoss QG Key Performance Parameters Value Unit 60 V 0.9 mΩ 445 A 127 nC 120 nC Type/Ordering Code IQD009N06NM5SC Package PG‑WHSON‑8 PG‑WHSON‑8 5 67 8 tab 4 3 21 Drain Pin 5-8, tab Gate *1 Pin 4 Source *1: Internal body diode Pin 1-3 Marking FA Related Links ‑ Datasheet https://www.infin
IQD009N06NM5SC Datasheet
