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IQDH29NE2LM5CG - MOSFET

General Description

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Key Features

  • N-channel, logic level.
  • Very low on-resistance RDS(on).
  • Superior thermal resistance.
  • 100% avalanche tested.
  • Pb-free lead plating; RoHS compliant.
  • Halogen-free according to IEC61249-2-21 Product validation Fully qualified according to JEDEC for Industrial.

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Full PDF Text Transcription for IQDH29NE2LM5CG (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IQDH29NE2LM5CG. For precise diagrams, and layout, please refer to the original PDF.

IQDH29NE2LM5CG MOSFET OptiMOSTM5Power-Transistor,25V Features •N-channel,logiclevel •Verylowon-resistanceRDS(on) •Superiorthermalresistance •100%avalanche...

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won-resistanceRDS(on) •Superiorthermalresistance •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS 25 V RDS(on),max 0.29 mΩ ID 789 A Qoss 127 nC QG 88 nC PG-TTFN-9 5 6 7 8 9 4 3 2 1 Drain Pin 5-8 Gate Pin 9 Source Pin 1-4 Type/OrderingCode IQDH29NE2LM5CG Package PG-TTFN-9 Marking H29E2LC RelatedLinks - Final Data Sheet 1 Rev.2.1,2023-03-29 OptiMOSTM5Power-Transistor,25V IQDH29NE2LM5CG TableofContents Descrip

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