Datasheet Summary
Public
IQDH88N06LM5SC Final datasheet
MOSFET
OptiMOS™ 5 Power‑Transistor, 60 V
Features
- N‑channel, logic level
- Very low on‑resistance RDS(on)
- Superior thermal resistance
- Optimized design for double side cooling
- 100% avalanche tested
- Pb‑free lead plating; RoHS pliant
- Halogen‑free according to IEC61249‑2‑21
Product validation
Fully qualified according to JEDEC for Industrial Applications
Table 1 Parameter VDS RDS(on),max ID Qoss QG
Key Performance Parameters
Value
Unit
0.86 mΩ
133 nC
76 nC
Type/Ordering Code IQDH88N06LM5SC
Package PG‑WHSON‑8
PG‑WHSON‑8
5 67 8 tab
4 3 21
Drain Pin 5-8, tab
Gate
- 1
Pin...