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IQE013N04LM6 - 40V MOSFET

General Description

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Key Features

  • Optimized for synchronous rectification.
  • Very low on-state resistance RDS(on).
  • 100% avalanche tested.
  • Superior thermal resistance.
  • N-channel, logic level.
  • Pb-free lead plating; RoHS compliant.
  • Halogen-free according to IEC61249-2-21 Product validation Fully qualified according to JEDEC for Industrial.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IQE013N04LM6 MOSFET OptiMOSTMPower-MOSFET,40V Features •Optimizedforsynchronousrectification •Verylowon-stateresistanceRDS(on) •100%avalanchetested •Superiorthermalresistance •N-channel,logiclevel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS 40 V RDS(on),max 1.35 mΩ ID 205 A Qoss 45 nC Qg(0V..10V) 41 nC PG-TSON-8-4 876 5 12 3 4 Drain Pin 5-8 Gate Pin 4 Source Pin 1-3 Type/OrderingCode IQE013N04LM6 Package PG-TSON-8-4 Marking 01304L6 RelatedLinks - Final Data Sheet 1 Rev.2.