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IQE013N04LM6CGSC - 40V MOSFET

General Description

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Key Features

  • Optimized for synchronous rectification.
  • N-channel, logic level.
  • Very low on-resistance RDS(on).
  • Superior thermal resistance.
  • 100% avalanche tested.
  • Pb-free lead plating; RoHS compliant.
  • Halogen-free according to IEC61249-2-21 Product validation Fully qualified according to JEDEC for Industrial.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IQE013N04LM6CGSC MOSFET OptiMOSTM6Power-Transistor,40V Features •Optimizedforsynchronousrectification •N-channel,logiclevel •Verylowon-resistanceRDS(on) •Superiorthermalresistance •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS 40 V RDS(on),max 1.35 mΩ ID 205 A Qoss 45 nC QG(0V...4.5V) 20 nC PG-WHTFN-9 5 678 Pin 1 2 3 4 9 4 3 2 1 Drain Pin 5-8 Gate *1 Pin 9 Source Pin 1-4 *1: Internal body diode Type/OrderingCode IQE013N04LM6CGSC Package PG-WHTFN-9 Marking N RelatedLinks - Final Data Sheet 1 Rev.2.