IQE057N10NM6
IQE057N10NM6 is MOSFET manufactured by Infineon.
MOSFET
Opti MOSTM6Power-Transistor,100V
Features
- N-channel,normallevel
- Verylowon-resistance RDS(on)
- Excellentgatechargex RDS(on)product(FOM)
- Verylowreverserecoverycharge(Qrr)
- Highavalancheenergyrating
- 175°Coperatingtemperature
- Optimizedforhighfrequencyswitchingandsynchronousrectification
- Pb-freeleadplating;Ro HSpliant
- Halogen-freeaccordingto IEC61249-2-21
- MSL1classifiedaccordingto J-STD-020
Productvalidation
Fullyqualifiedaccordingto JEDECfor Industrial Applications
Table1Key Performance Parameters
Parameter
Value
Unit
RDS(on),max
5.7 mΩ
Qoss
48 n C
QG(0V...10V)
26 n C
Qrr(100A/µs)
37.6 n C
PG-TSON-8
43 2 1
Drain Pin...
