Datasheet4U Logo Datasheet4U.com

IRFIZ44NPbF - Power MOSFET

This page provides the datasheet information for the IRFIZ44NPbF, a member of the IRFIZ44N Power MOSFET family.

Datasheet Summary

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area.

📥 Download Datasheet

Datasheet preview – IRFIZ44NPbF

Datasheet Details

Part number IRFIZ44NPbF
Manufacturer Infineon
File Size 502.97 KB
Description Power MOSFET
Datasheet download datasheet IRFIZ44NPbF Datasheet
Additional preview pages of the IRFIZ44NPbF datasheet.

📁 Similar Datasheet

  • IRFIZ44NPBF - HEXFET Power MOSFET (International Rectifier)
  • IRFIZ44N - Power MOSFET (International Rectifier)
  • IRFIZ44N - N-Channel MOSFET (INCHANGE)
  • IRFIZ44A - Power MOSFET (Samsung)
  • IRFIZ44A - Advanced Power MOSFET (Fairchild Semiconductor)
  • IRFIZ44G - HEXFET POWER MOSFET (International Rectifier)
  • IRFIZ44G - N-Channel MOSFET (INCHANGE)
  • IRFIZ44G - Power MOSFET (Vishay)
  • IRFIZ44GPBF - Power MOSFET (International Rectifier)
  • IRFIZ46N - Power MOSFET (International Rectifier)
Other Datasheets by Infineon

Full PDF Text Transcription

Click to expand full text
 Advanced Process Technology  Isolated Package  High Voltage Isolation = 2.5KVRMS   Sink to Lead Creepage Dist. = 4.8mm  Fully Avalanche Rated  Lead-Free IRFIZ44NPbF HEXFET® Power MOSFET VDSS RDS(on) ID 55V 0.024 31A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 Full Pak eliminates the need for additional insulating hardware in commercial-industrial applications.
Published: |