IRFR3710ZPbF Datasheet | Infineon

Features - Advanced Process Technology - Ultra Low On-Resistance - 175°C Operating Temperature - Fast Switching - Repetitive Avalanche Allowed up to Tjmax - Lead-Free HEXFET® Power MOSFET VDSS RDS(on) 100V 18m 42A Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features bine to make this design an extremely efficient and reliable device for use in a wide variety of applications. D- Pak IRFR3710ZPb F Refer to page 9 for package outline G Gate D Drain S Source Base part number IRFR3710ZPb F Package Type D-Pak Standard Pack Form Tape and Reel Left Tape and Reel Quantity 3000 2000 Orderable Part Number IRFR3710ZTRLPb F IRFR3710ZTRPb F Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current  Maximum Power Dissipation Linear Derating Factor VGS EAS (Thermally limited) EAS (Tested ) IAR EAR TJ TSTG Gate-to-Source Voltage Single Pulse Avalanche Energy Single Pulse Avalanche Energy Tested Value Avalanche Current Repetitive Avalanche Energy  Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Thermal Resistance Symbol RJC RJA RJA Parameter Junction-to-Case Junction-to-Ambient ( PCB Mount)  Junction-to-Ambient Max. 56 39 42 220 140 0.95 ± 20 150...