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IRFR3710ZPbF Datasheet Power MOSFET

Manufacturer: Infineon

Overview: IRFR3710ZPbF.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Additional

Key Features

  • Advanced Process Technology.
  • Ultra Low On-Resistance.
  • 175°C Operating Temperature.
  • Fast Switching.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Lead-Free HEXFET® Power MOSFET VDSS RDS(on) ID 100V 18m 42A D.

IRFR3710ZPbF Distributor