IRFR3710ZPBF Datasheet
IRFR3710ZPBF Datasheet (International Rectifier)
International Rectifier
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of t.
l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free VDSS = 100V G S RDS(on) = 18mΩ ID = 42A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes .
IRFR3710ZPBF Datasheet (Infineon)
Infineon
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperatu.
* Advanced Process Technology
* Ultra Low On-Resistance
* 175°C Operating Temperature
* Fast Switching
* Repetitive Avalanche Allowed up to Tjmax
* Lead-Free
HEXFET® Power MOSFET
VDSS RDS(on)
ID
100V 18m 42A
D
Description This HEXFET® Power MOSFET utilizes the latest processing techniques to a.