IRGS4640DPbF - Insulated Gate Bipolar Transistor

Features

E n-channel G Gate E GC IRGS4640DPbF D2Pak GCE E C GCE G GCE IRGSL4640DPbF IRGB4640DPbF IRGP4640DPbF IRGP4640D-EPbF TO-262Pak TO-220AC TO-247AC TO-247AD C Collector E Emitter Benefits Low VCE(ON) and switching losses High efficiency in a wide range of.

Infineon

Datasheet Details

Part number	IRGS4640DPbF
Manufacturer	Infineon
File Size	752.59 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	IRGS4640DPbF Datasheet
Additional preview pages of the IRGS4640DPbF datasheet.

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Full PDF Text Transcription

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VCES = 600V IRGS4640DPbF IRGSL4640DPbF IRGB4640DPbF IRGP4640D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C IC = 40A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C G VCE(ON) typ. = 1.

Published: Aug 12, 2018 |