IRL3803PBF Datasheet Text
- Logic
- Level Gate Drive
- Advanced Process Technology
- Ultra Low On-Resistance
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
- Lead-Free
Description Fifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all mercialindustrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
D G
S
G Gate
IRMOSFET™ IRL3803PbF
VDSS RDS(on) max.
ID
30V 0.006 140A
TO-220AB IRL3803PbF
D Drain
S Source
Base part number IRL3803PbF
Package Type TO-220
Standard Pack
Form
Quantity
Tube
50
Orderable Part Number...
