Datasheet Summary
Public
ISC055N15NM6 Final datasheet
MOSFET
OptiMOS™ 6 Power‑Transistor, 150 V
Features
- N‑channel, normal level
- Very low on‑resistance RDS(on)
- Superior thermal resistance
- 100% avalanche tested
- Pb‑free lead plating; RoHS pliant
- Halogen‑free according to IEC61249‑2‑21
- MSL 1 classified according to J‑STD‑020
Product validation
Fully qualified according to JEDEC for Industrial Applications
Table 1 Key Performance Parameters
Parameter
Value
Unit
RDS(on),max
5.5 mΩ
Qoss
130 nC
43 nC
Qrr (500 A/μs)
105 nC
Type/Ordering Code ISC055N15NM6
Package PG‑TDSON‑8
PG‑TDSON‑8 FL
8 7
5...