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ISG0613N04NM6H - MOSFET

General Description

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Key Features

  • Symmetrical Half Bridge.
  • Optimized for low voltage drives and battery powered.

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Other Datasheets by Infineon

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ISG0614N06NM5H MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ISG0613N04NM6H MOSFET OptiMOSTM6Power-Transistor,40V Features •SymmetricalHalfBridge •Optimizedforlowvoltagedrivesandbatterypoweredapplications •OptimizedforhighperformanceSMPS •N-channel •Verylowon-resistanceRDS(on) •Superiorthermalresistance •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS 40 V RDS(on),max 0.88 mΩ ID 299 A Qoss 76 nC QG(0V..