ISZ106N12LM6
ISZ106N12LM6 is MOSFET manufactured by Infineon.
Features
- N-channel,logiclevel
- Verylowon-resistance RDS(on)
- Excellentgatechargex RDS(on)product(FOM)
- Verylowreverserecoverycharge(Qrr)
- Highavalancheenergyrating
- 175°Coperatingtemperature
- Optimizedforhighfrequencyswitchingandsynchronousrectification
- Pb-freeleadplating;Ro HSpliant
- Halogen-freeaccordingto IEC61249-2-21
- MSL1classifiedaccordingto J-STD-020
Productvalidation
Fullyqualifiedaccordingto JEDECfor Industrial Applications
Table1Key Performance Parameters
Parameter
Value
Unit
RDS(on),max
10.6 mΩ
Qoss
37 n C
QG(0V...4.5V)
10.4 n C
Qrr(1000A/µs)
106 n C
S3O8
8 765
567 8
1 2 34
43 2 1
Drain Pin 5-8
Gate
- 1
Pin 4
Source
- 1: Internal body diode Pin 1-3
Type/Ordering Code ISZ106N12LM6
Package...
