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ISZ15EP15LM - MOSFET

General Description

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Key Features

  • P-channel.
  • Very low on-resistance RDS(on) @ VGS=4.5 V.
  • 100% avalanche tested.
  • Logic level.
  • Enhancement mode.
  • Pb-free lead plating; RoHS compliant.
  • Halogen-free according to IEC61249-2-21 Product validation Fully qualified according to JEDEC for Industrial.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ISZ15EP15LM MOSFET OptiMOSTMPower-Transistor,-150V Features •P-channel •Verylowon-resistanceRDS(on)@VGS=4.5V •100%avalanchetested •Logiclevel •Enhancementmode •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS -150 V RDS(on),max 1500 mΩ ID -2.7 A Qoss -3.3 nC QG -11 nC PG-TSDSON-8FL 8 765 567 8 1 2 34 43 2 1 Drain Pin 5-8 Gate *1 Pin 4 Source *1: Internal body diode Pin 1-3 Type/OrderingCode ISZ15EP15LM Package PG-TSDSON-8 FL Marking 15EP15L RelatedLinks - Final Data Sheet 1 Rev.2.