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ITS4200S-ME-N Datasheet Smart High-side Nmos-power Switch

Manufacturer: Infineon

Overview: ITS4200S-ME-N Smart High-Side NMOS-Power Switch Data Sheet Rev 1.

General Description

The ITS4200S-ME-N is a protected single channel Smart High-Side NMOS-Power Switch in a SOT-223-4 package with charge pump and CMOS patible input.

The device is monolithically integrated in Smart technology.

Product Summary Overvoltage protection VSAZ min= 41V Operating voltage range: 5V ≤VS≤ 34V On-state resistance RDSON typ = 160mΩ Nominal load current ILNOM = 0.7A Operating Temperature range: Tj = -40°C to 125°C Standby Current: ISSTB= 25µA Application • All types of resistive, inductive and capacitive loads • Power switch for 12V and 24V DC applications with CMOS patible control interface • Driver for electromagnetic relays • Power managment for high-side-switching with low current consumption in OFF-mode Type ITS4200S-ME-N Package SOT-223-4 Marking I200SN Data Sheet 2 Rev 1.0, 2012-09-01 2 Block Diagram and Terms ITS4200S-ME-N Block Diagram and Terms ITS4200S-ME-N IN 3 Bias Supervision Overvoltage Protection ESD Protection Logic Current Limiter Gate Control Circuit Temperature Sensor Figure 1 Block diagram 2 GND VS 4 OUT 1 VIN VST V FD S Voltage- and Current-Definitions: ITS4

Key Features

  • CMOS compatible input.
  • Switching all types of resistive, inductive and capacitive loads.
  • Fast demagnetization of inductive loads.
  • Very low standby current.
  • Optimized Electromagnetic Compatibility.
  • Overload protection.
  • Current limitation.
  • Short circuit protection.
  • Thermal shutdown with restart.
  • Overvoltage protection (including load dump).
  • Reverse battery protection with external resistor.

ITS4200S-ME-N Distributor