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ITS4200S-ME-P Datasheet Smart High-side Nmos-power Switch

Manufacturer: Infineon

Overview: ITS4200S-ME-P Smart High-Side NMOS-Power Switch Data Sheet Rev 1.

General Description

The ITS4200S-ME-P is a protected single channel Smart High-Side NMOS-Power Switch in a SOT-223-4 package with charge pump and CMOS patible input.

The device is monolithically integrated in Smart technology.

Product Summary Overvoltage protection VSAZmin= 47V Operating voltage range: 11V < VS< 45V On-state resistance RDSON = typ 150mΩ Nominal load current ILNOM= 1.4A Operating Temperature range: Tj = -40°C to 125°C Standby Current: ISSTB = 50µA Application • All types of resistive, inductive and capacitive loads • Power switch for 12V and 24V DC applications with CMOS patible control interface • Driver for electromagnetic relays • Power managment for high-side-switching with low current consumption in OFF-mode Type ITS4200S-ME-P Package SOT-223-4 Marking I200SP Data Sheet 2 Rev 1.0, 2012-09-01 2 Block Diagram and Terms ITS4200S-ME-P Block Diagram and Terms ITS4200 S-ME-P IN 3 Bias Supervision Overvoltage Protection ESD Protection Logic Current Limiter Gate Control Circuit Temperature Sensor Figure 1 Block diagram 2 GND VS 4 OUT 1 VIN VST V FD S Voltage- and Current-Definitio

Key Features

  • CMOS compatible input.
  • Switching all types of resistive, inductive and capacitive loads.
  • Fast demagnetization of inductive loads.
  • Very low standby current.
  • Optimized Electromagnetic Compatibility (EMC).
  • Overload protection.
  • Current limitation.
  • Short circuit protection.
  • Thermal shutdown with restart.
  • Overvoltage protection (including load dump).
  • Reverse battery protection with external resistor.

More Datasheets from Infineon

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ITS4200S-ME-P Distributor