K15N60 Datasheet | Infineon

SKP15N60 SKW15N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Em Con diode - 75% lower Eoff pared to previous generation bined with low conduction losses - Short circuit withstand time - 10 µs - Designed for: - Motor controls - Inverter - NPT-Technology for 600V applications offers: ..- very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-220-3-1 - parallel switching capability (TO-220AB) - Very soft, fast recovery anti-parallel Em Con diode - Pb-free lead plating; Ro HS pliant 1 - Qualified according to JEDEC for target applications - plete product spectrum and PSpice Models : http://.infineon./igbt/ Type SKP15N60 SKW15N60 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature wavesoldering, 1.6 mm (0.063 in.) from case for 10s Tj , Tstg Ts -55...+150 260 °C °C PG-TO-247-3-21 (TO-247AC) VCE 600V 600V IC 15A 15A VCE(sat) 2.3V 2.3V Tj 150°C 150°C Marking Package K15N60 PG-TO-220-3-1 K15N60 PG-TO-247-3-21 Symbol VCE IC Value 600 31 15 Unit V A ICpul s IF 62 62 31 15 IFpul s VGE t SC Ptot 62 ±20 10 139 V µs W VGE = 15V, VCC ≤ 600V, Tj ≤...