K15T120
K15T120 is IGBT manufactured by Infineon.
IKW15T120
Trench Stop Series
®
Low Loss Duo Pack : IGBT in Trench Stop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
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- Approx. 1.0V reduced VCE(sat) and 0.5V reduced VF pared to BUP313D Short circuit withstand time
- 10s Designed for :
- Frequency Converters
- Uninterrupted Power Supply ® Trench Stop and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge Very soft, fast recovery anti-parallel Emitter Controlled HE diode 1 Qualified according to JEDEC for target applications Pb-free lead plating; Ro HS pliant plete product spectrum and PSpice Models : http://.infineon./igbt/ VCE 1200V IC 15A VCE(sat),Tj=25°C 1.7V Tj,max 150C Marking Code K15T120 Package PG-TO-247-3
PG-TO-247-3
Type IKW15T120
Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 1200V, Tj 150C Diode forward current TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time Power dissipation TC = 25C Operating junction temperature Storage temperature Tj Tstg -40...+150 -55...+150 C
2)
Symbol VCE IC
Value 1200 30 15
Unit V A
ICpul s IF
45 45
30 15 IFpul s VGE t SC Ptot 45 20 10 110 V s W
VGE = 15V, VCC 1200V, Tj 150C
1 2)
J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2.4 12.06.2013
Free Datasheet http://..
IFAG IPC TD...