Infineon Technologies MMBTA56
PNP Silicon AF Transistor
| Part No. | MMBTA56 |
|---|---|
| Datasheet | MMBTA56 Download |
| Manufacturer |  Infineon Technologies |
| Description | PNP Silicon AF Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Symbol Value Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current, tp ≤ 10 ms Base current Peak base current Total power dissipationTS ≤ 79°C Junction temperature Storage temperature VCEO VCBO VEBO IC ICM IB IBM Ptot Tj Tstg 80 80 4 500 1 100 200 330 150 -65 ... 150 Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value ≤ 215 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) Unit V mA A mA mW °C Unit K/W 1 2011-08-05 SMBTA56/MMBTA56ELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 80 - - IC = 1 mA, IB = 0 Collector-base breakdown voltage V(BR)CBO 80 - - IC = 100 µA, IE = 0 Emitter-base breakdown voltage V(BR)EBO 4 - - IE = 10 µA, IC = 0 Collector-base cutoff current ICBO VCB = 80 V, IE = 0 - - 0.1 VCB = 80 V, IE =...
