• Part: PTFA043002E
  • Description: Thermally-Enhanced High Power RF LDMOS FETs
  • Manufacturer: Infineon
  • Size: 326.08 KB
Download PTFA043002E Datasheet PDF
PTFA043002E page 2
Page 2
PTFA043002E page 3
Page 3

Datasheet Summary

Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 - 860 MHz Description The PTFA043002 is a 300-watt, internally-matched, laterally-diffused, GOLDMOS ® push-pull FET intended for analog and digital broadcast, including 8VSB and COFDM applications from 470 to 860 MHz. The thermally-enhanced package provides the coolest operation available. Full gold metallization ensures excellent device lifetime and reliability. PTFA043002E Package H-30275-4 Features Two-tone Drive-up at 800 MHz (in broadband circuit) VDD = 32 V, IDQ = 1.55 A, 0 -10 -20 - - 45 40 Thermally-enhanced package Broadband internal matching Typical 8VSB performance - Average output power = 100 W - Gain = 16...