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PTFA072401FL Datasheet Thermally-enhanced High Power Rf Ldmos Fets

Manufacturer: Infineon

Overview: PTFA072401EL PTFA072401FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 725 – 770.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The PTFA072401EL and PTFA072401FL are 240-watt LDMOS FETs designed for use in cellular power amplifier applications in the 725 to 770 MHz frequency band.

These devices

Key Features

  • Broadband internal matching Typical two-carrier WCDMA performance at 770 MHz, 30 V - Average output power = 40 W - Linear Gain = 19 dB - Efficiency = 25% - Intermodulation distortion =.
  • 39 dBc Typical CW performance, 770 MHz, 30 V - Output power at P.
  • 1dB = 240 W - Efficiency = 58% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR @ 30 V, 240 W (CW) output power Thermally-enha.

More Datasheets from Infineon

Part Number Description
PTFA072401EL Thermally-Enhanced High Power RF LDMOS FETs
PTFA070601E Thermally-Enhanced High Power RF LDMOS FETs
PTFA070601F Thermally-Enhanced High Power RF LDMOS FETs
PTFA071701E Thermally-Enhanced High Power RF LDMOS FETs
PTFA071701F Thermally-Enhanced High Power RF LDMOS FETs
PTFA041501E Thermally-Enhanced High Power RF LDMOS FETs
PTFA041501F Thermally-Enhanced High Power RF LDMOS FETs
PTFA041501GL Thermally-Enhanced High Power RF LDMOS FETs
PTFA041501HL Thermally-Enhanced High Power RF LDMOS FETs
PTFA043002E Thermally-Enhanced High Power RF LDMOS FETs

PTFA072401FL Distributor