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PTFA072401FL - Thermally-Enhanced High Power RF LDMOS FETs

Download the PTFA072401FL datasheet PDF. This datasheet also covers the PTFA072401EL variant, as both devices belong to the same thermally-enhanced high power rf ldmos fets family and are provided as variant models within a single manufacturer datasheet.

General Description

The PTFA072401EL and PTFA072401FL are 240-watt LDMOS FETs designed for use in cellular power amplifier applications in the 725 to 770 MHz frequency band.

These devices feature internal I/O matching and thermally-enhanced, open-cavity ceramic packages.

Key Features

  • Broadband internal matching Typical two-carrier WCDMA performance at 770 MHz, 30 V - Average output power = 40 W - Linear Gain = 19 dB - Efficiency = 25% - Intermodulation distortion =.
  • 39 dBc Typical CW performance, 770 MHz, 30 V - Output power at P.
  • 1dB = 240 W - Efficiency = 58% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR @ 30 V, 240 W (CW) output power Thermally-enha.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PTFA072401EL_Infineon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PTFA072401FL
Manufacturer Infineon
File Size 345.98 KB
Description Thermally-Enhanced High Power RF LDMOS FETs
Datasheet download datasheet PTFA072401FL Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PTFA072401EL PTFA072401FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 725 – 770 MHz Description The PTFA072401EL and PTFA072401FL are 240-watt LDMOS FETs designed for use in cellular power amplifier applications in the 725 to 770 MHz frequency band. These devices feature internal I/O matching and thermally-enhanced, open-cavity ceramic packages. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA072401EL Package H-33288-2 PTFA072401FL Package H-34288-2 Gain & Efficiency vs. Output Power VDD = 30 V, IDQ = 1.