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PTFA072401FL

Manufacturer: Infineon

PTFA072401FL datasheet by Infineon.

This datasheet includes multiple variants, all published together in a single manufacturer document.

PTFA072401FL datasheet preview

PTFA072401FL Datasheet Details

Part number PTFA072401FL
Datasheet PTFA072401FL PTFA072401EL Datasheet (PDF)
File Size 345.98 KB
Manufacturer Infineon
Description Thermally-Enhanced High Power RF LDMOS FETs
PTFA072401FL page 2 PTFA072401FL page 3

PTFA072401FL Overview

The PTFA072401EL and PTFA072401FL are 240-watt LDMOS FETs designed for use in cellular power amplifier applications in the 725 to 770 MHz frequency band.

PTFA072401FL Key Features

  • Broadband internal matching Typical two-carrier WCDMA performance at 770 MHz, 30 V
  • Average output power = 40 W
  • Linear Gain = 19 dB
  • Efficiency = 25%
  • Intermodulation distortion = -39 dBc Typical CW performance, 770 MHz, 30 V
  • Output power at P-1dB = 240 W
  • Efficiency = 58% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI dri
  • 18 17 16 15 30 35 40 45 50 55
  • See Infineon distributor for future availability
  • 1.82 2.5
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More Datasheets from Infineon

View all Infineon datasheets

Part Number Description
PTFA072401EL Thermally-Enhanced High Power RF LDMOS FETs
PTFA070601E Thermally-Enhanced High Power RF LDMOS FETs
PTFA070601F Thermally-Enhanced High Power RF LDMOS FETs
PTFA071701E Thermally-Enhanced High Power RF LDMOS FETs
PTFA071701F Thermally-Enhanced High Power RF LDMOS FETs
PTFA041501E Thermally-Enhanced High Power RF LDMOS FETs
PTFA041501F Thermally-Enhanced High Power RF LDMOS FETs
PTFA041501GL Thermally-Enhanced High Power RF LDMOS FETs
PTFA041501HL Thermally-Enhanced High Power RF LDMOS FETs
PTFA043002E Thermally-Enhanced High Power RF LDMOS FETs

PTFA072401FL Distributor

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