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PTFA091503EL - Thermally-Enhanced High Power RF LDMOS FETs

Datasheet Summary

Description

The PTFA091503EL is a 150-watt, internally-matched FET intended for use in power amplifier applications in the 920 to 960 MHz band.

Features

  • internal I/O matching and thermally-enhanced open cavity ceramic package. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFA091503EL Package H-33288-6 Features VDD = 30 V, IDQ = 1250 mA, ƒ = 960 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, 3.84MHz Bandwidth 60 50 -30 Two-carrier WCDMA Performance.
  • Broadband internal matching.
  • Typical two-carrier WCDMA performance at 960 MHz,.

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Datasheet Details

Part number PTFA091503EL
Manufacturer Infineon
File Size 544.60 KB
Description Thermally-Enhanced High Power RF LDMOS FETs
Datasheet download datasheet PTFA091503EL Datasheet
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Full PDF Text Transcription

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PTFA091503EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 150 W, 920 – 960 MHz Description The PTFA091503EL is a 150-watt, internally-matched FET intended for use in power amplifier applications in the 920 to 960 MHz band. This device features internal I/O matching and thermally-enhanced open cavity ceramic package. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFA091503EL Package H-33288-6 Features VDD = 30 V, IDQ = 1250 mA, ƒ = 960 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, 3.
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