PTFA091503EL Datasheet | Infineon

Description The PTFA091503EL is a 150-watt, internally-matched FET intended for use in power amplifier applications in the 920 to 960 MHz band. This device features internal I/O matching and thermally-enhanced open cavity ceramic package. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFA091503EL Package H-33288-6 Features VDD = 30 V, IDQ = 1250 m A, ƒ = 960 MHz, 3GPP WCDMA signal, PAR = 8 d B, 10 MHz carrier spacing, 3.84MHz Bandwidth 60 50 -30 Two-carrier WCDMA Performance - Broadband internal matching - Typical two-carrier WCDMA performance at 960 MHz, 30 V - Average output power = 32 W - Linear Gain = 17 d B - Efficiency = 29% - Intermodulation distortion = - 37 d Bc - Adjacent channel power = - 39 d Bc - Typical CW performance, 960 MHz, 30 V - Output power at P1d B = 150 W - Linear Gain = 17 d B - Efficiency = 54% - Integrated ESD protection: Human Body Model, Class 2 (minimum) - Excellent thermal stability, low HCI drift - Capable of handling 10:1 VSWR @ 30 V, 150 W (CW) output power - Pb-free, Ro HS-pliant ACPR Drain Efficiency (%) 40 30 20 10 0 30 IMD Efficiency Gain -40 -45 -50 -55 -60 Output Power (d Bm) RF Characteristics fixture) VDD = 30 V, IDQ = 1250 m A, POUT = 32 W average ƒ1 = 950 MHz, ƒ2 = 960 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 d B @ 0.01% CCDF Two-carrier WCDMA Measurements (not subject to production test- verified by design/characterization in Infineon test Characteristic Gain Drain Efficiency Intermodulation Distortion IMD (d Bc) , ACPR (d...