PTFA210601E - Thermally-Enhanced High Power RF LDMOS FET

Product Overview

Infineon

Datasheet Details

Part number	PTFA210601E
Manufacturer	Infineon
File Size	229.08 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PTFA210601E Datasheet
Additional preview pages of the PTFA210601E datasheet.

Product details

Description

The PTFA210601E and PTFA210601F are 60-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier applications in the 2110 to 2170 MHz band.

Features

include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA210601E Package H-36265-2 PTFA210601F Package H-37265-2 IM3 (dBc), ACPR (dBc) Drain Efficiency (%) 2-Carrier WCDMA Drive-up VDD = 28 V, IDQ = 550 mA, f = 2140 MHz, 3GPP WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing -25 35 -30 Efficiency 30 -35 IM3 -40.

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Published: Feb 21, 2016 |