Datasheet Summary
PTFA210601E PTFA210601F
Thermally-Enhanced High Power RF LDMOS FETs 60 W, 2110
- 2170 MHz
Description
The PTFA210601E and PTFA210601F are 60-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier applications in the 2110 to 2170 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
PTFA210601E Package H-36265-2
PTFA210601F Package H-37265-2
IM3 (dBc), ACPR (dBc) Drain Efficiency (%)
2-Carrier WCDMA Drive-up VDD = 28 V, IDQ = 550 mA, f = 2140 MHz, 3GPP WCDMA signal, P/A R =...