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PTFA210601F

PTFA210601F is Thermally-Enhanced High Power RF LDMOS FET manufactured by Infineon.
PTFA210601F datasheet preview

PTFA210601F Details

Part number PTFA210601F
Datasheet PTFA210601F / PTFA210601E Datasheet PDF (Download)
File Size 229.08 KB
Manufacturer Infineon
Description Thermally-Enhanced High Power RF LDMOS FET
PTFA210601F page 2 PTFA210601F page 3

PTFA210601F Overview

The PTFA210601E and PTFA210601F are 60-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier applications in the 2110 to 2170 MHz band.

PTFA210601F Key Features

  • 45 15 ACPR
  • Thermally-enhanced packages, Pb-free and RoHS-pliant
  • Broadband internal matching
  • Typical two-carrier WCDMA performance at 2140 MHz, 28 V
  • Average output power = 12 W
  • Linear Gain = 16 dB
  • Efficiency = 27.0%
  • Intermodulation distortion = -38 dBc
  • Adjacent channel power = -44 dBc
  • Typical CW performance, 2170 MHz, 28 V

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