Datasheet4U Logo Datasheet4U.com
Infineon logo

PTFA210601F

Manufacturer: Infineon

PTFA210601F datasheet by Infineon.

This datasheet includes multiple variants, all published together in a single manufacturer document.

PTFA210601F datasheet preview

PTFA210601F Datasheet Details

Part number PTFA210601F
Datasheet PTFA210601F PTFA210601E Datasheet (PDF)
File Size 229.08 KB
Manufacturer Infineon
Description Thermally-Enhanced High Power RF LDMOS FET
PTFA210601F page 2 PTFA210601F page 3

PTFA210601F Overview

The PTFA210601E and PTFA210601F are 60-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier applications in the 2110 to 2170 MHz band.

PTFA210601F Key Features

  • 45 15 ACPR
  • Thermally-enhanced packages, Pb-free and RoHS-pliant
  • Broadband internal matching
  • Typical two-carrier WCDMA performance at 2140 MHz, 28 V
  • Average output power = 12 W
  • Linear Gain = 16 dB
  • Efficiency = 27.0%
  • Intermodulation distortion = -38 dBc
  • Adjacent channel power = -44 dBc
  • Typical CW performance, 2170 MHz, 28 V
Infineon logo - Manufacturer

More Datasheets from Infineon

View all Infineon datasheets

Part Number Description
PTFA210601E Thermally-Enhanced High Power RF LDMOS FET
PTFA210301E Thermally-Enhanced High Power RF LDMOS FET
PTFA210701E Thermally-Enhanced High Power RF LDMOS FET
PTFA210701F Thermally-Enhanced High Power RF LDMOS FET
PTFA211001E Thermally-Enhanced High Power RF LDMOS FET
PTFA211801E Thermally-Enhanced High Power RF LDMOS FET
PTFA211801F Thermally-Enhanced High Power RF LDMOS FET
PTFA212001E Thermally-Enhanced High Power RF LDMOS FET
PTFA212001F Thermally-Enhanced High Power RF LDMOS FET
PTFA212002E Thermally-Enhanced High Power RF LDMOS FET

PTFA210601F Distributor

Datasheet4U Logo
Since 2006. D4U Semicon. About Datasheet4U Contact Us Privacy Policy Purchase of parts