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PTFA210601F - Thermally-Enhanced High Power RF LDMOS FET

Download the PTFA210601F datasheet PDF. This datasheet also covers the PTFA210601E variant, as both devices belong to the same thermally-enhanced high power rf ldmos fet family and are provided as variant models within a single manufacturer datasheet.

General Description

The PTFA210601E and PTFA210601F are 60-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier applications in the 2110 to 2170 MHz band.

Key Features

  • include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA210601E Package H-36265-2 PTFA210601F Package H-37265-2 IM3 (dBc), ACPR (dBc) Drain Efficiency (%) 2-Carrier WCDMA Drive-up VDD = 28 V, IDQ = 550 mA, f = 2140 MHz, 3GPP WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing -25 35 -30 Efficiency 30 -35 IM3 -40.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PTFA210601E-Infineon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PTFA210601F
Manufacturer Infineon
File Size 229.08 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PTFA210601F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PTFA210601E PTFA210601F Thermally-Enhanced High Power RF LDMOS FETs 60 W, 2110 – 2170 MHz Description The PTFA210601E and PTFA210601F are 60-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier applications in the 2110 to 2170 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.