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PTFA210701E

PTFA210701E is Thermally-Enhanced High Power RF LDMOS FET manufactured by Infineon.
PTFA210701E datasheet preview

PTFA210701E Details

Part number PTFA210701E
Datasheet PTFA210701E Datasheet PDF (Download)
File Size 375.96 KB
Manufacturer Infineon
Description Thermally-Enhanced High Power RF LDMOS FET
PTFA210701E page 2 PTFA210701E page 3

PTFA210701E Overview

The PTFA210701E and PTFA210701F are 70-watt LDMOS FETs designed for single- and dual-carrier WCDMA power amplifier applications in the 2110 MHz to 2170 MHz band.

PTFA210701E Key Features

  • 35 Efficiency
  • 40 IM3
  • Thermally-enhanced packages, Pb-free and RoHS-pliant
  • Broadband internal matching
  • Typical two-carrier WCDMA performance at 2140 MHz, 30 V
  • Average output power = 42 dBm
  • Linear Gain = 16.5 dB
  • Efficiency = 27.0%
  • Intermodulation distortion = -37 dBc
  • Adjacent channel power = -42.5 dBc

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