• Part: PTFA210701F
  • Description: Thermally-Enhanced High Power RF LDMOS FET
  • Manufacturer: Infineon
  • Size: 375.96 KB
Download PTFA210701F Datasheet PDF
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Datasheet Summary

Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 - 2170 MHz PTFA210701E PTFA210701F Description The PTFA210701E and PTFA210701F are 70-watt LDMOS FETs designed for single- and dual-carrier WCDMA power amplifier applications in the 2110 MHz to 2170 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA210701E Package H-36265-2 PTFA210701F Package H-37265-2 IM3 (dBc), ACPR (dBc) Drain Efficiency (%) Two-carrier WCDMA Drive-up VDD = 30 V, IDQ...