Datasheet4U Logo Datasheet4U.com

PTFA210701F Datasheet Thermally-enhanced High Power Rf Ldmos Fet

Manufacturer: Infineon

Overview: Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 – 2170 MHz PTFA210701E.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The PTFA210701E and PTFA210701F are 70-watt LDMOS FETs designed for single- and dual-carrier WCDMA power amplifier applications in the 2110 MHz to 2170 MHz band.

Key Features

  • include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA210701E Package H-36265-2 PTFA210701F Package H-37265-2 IM3 (dBc), ACPR (dBc) Drain Efficiency (%) Two-carrier WCDMA Drive-up VDD = 30 V, IDQ = 550 mA, ƒ = 2140 MHz, 3GPP WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing -30 35 -35 Efficiency -40 IM3 -45 -50.

More Datasheets from Infineon

Part Number Description
PTFA210701E Thermally-Enhanced High Power RF LDMOS FET
PTFA210301E Thermally-Enhanced High Power RF LDMOS FET
PTFA210601E Thermally-Enhanced High Power RF LDMOS FET
PTFA210601F Thermally-Enhanced High Power RF LDMOS FET
PTFA211001E Thermally-Enhanced High Power RF LDMOS FET
PTFA211801E Thermally-Enhanced High Power RF LDMOS FET
PTFA211801F Thermally-Enhanced High Power RF LDMOS FET
PTFA212001E Thermally-Enhanced High Power RF LDMOS FET
PTFA212001F Thermally-Enhanced High Power RF LDMOS FET
PTFA212002E Thermally-Enhanced High Power RF LDMOS FET

PTFA210701F Distributor