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PTFA210701F - Thermally-Enhanced High Power RF LDMOS FET

Download the PTFA210701F datasheet PDF. This datasheet also covers the PTFA210701E variant, as both devices belong to the same thermally-enhanced high power rf ldmos fet family and are provided as variant models within a single manufacturer datasheet.

General Description

The PTFA210701E and PTFA210701F are 70-watt LDMOS FETs designed for single- and dual-carrier WCDMA power amplifier applications in the 2110 MHz to 2170 MHz band.

Key Features

  • include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA210701E Package H-36265-2 PTFA210701F Package H-37265-2 IM3 (dBc), ACPR (dBc) Drain Efficiency (%) Two-carrier WCDMA Drive-up VDD = 30 V, IDQ = 550 mA, ƒ = 2140 MHz, 3GPP WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing -30 35 -35 Efficiency -40 IM3 -45 -50.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PTFA210701E-Infineon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PTFA210701F
Manufacturer Infineon
File Size 375.96 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PTFA210701F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 – 2170 MHz PTFA210701E PTFA210701F Description The PTFA210701E and PTFA210701F are 70-watt LDMOS FETs designed for single- and dual-carrier WCDMA power amplifier applications in the 2110 MHz to 2170 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.