• Part: PTFA211801E
  • Description: Thermally-Enhanced High Power RF LDMOS FET
  • Manufacturer: Infineon
  • Size: 480.12 KB
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Datasheet Summary

IM3 (dBc), ACPR (dBc) not DrainremenEffdiciencyed(%)for new design Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 180 W, 2110 - 2170 MHz Description The PTFA211801E is a thermally-enhanced, 180-watt, internally matched LDMOS FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from 2110 to 2170 MHz. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFA211801E Package H-36260-2 Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1.2 A, ƒ = 2140 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing -25...