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PTFA211801E - Thermally-Enhanced High Power RF LDMOS FET

General Description

The PTFA211801E is a thermally-enhanced, 180-watt, internally matched LDMOS FET intended for WCDMA applications.

It is characaterized for single- and two-carrier WCDMA operation from 2110 to 2170 MHz.

Key Features

  • Broadband internal matching.
  • Typical two-carrier WCDMA performance at 2140 MHz, 28 V - Average output power = 45.5 dBm - Linear Gain = 15.5 dB - Efficiency = 27.5% - Intermodulation distortion =.
  • 36 dBc - Adjacent channel power =.
  • 41 dBc.
  • Typical CW performance, 2170 MHz, 30 V - Output power at P1dB = 180 W - Efficiency = 52%.
  • Integrated ESD protection.
  • Excellent thermal stability, low HCI drift.
  • Capable of handling 10:.

📥 Download Datasheet

Datasheet Details

Part number PTFA211801E
Manufacturer Infineon
File Size 480.12 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PTFA211801E Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IM3 (dBc), ACPR (dBc) not DrainrecommenEffdiciencyed(%)for new design PTFA211801E Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 180 W, 2110 – 2170 MHz Description The PTFA211801E is a thermally-enhanced, 180-watt, internally matched LDMOS FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from 2110 to 2170 MHz. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFA211801E Package H-36260-2 Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1.