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PTFA211801E

PTFA211801E is Thermally-Enhanced High Power RF LDMOS FET manufactured by Infineon.
PTFA211801E datasheet preview

PTFA211801E Details

Part number PTFA211801E
Datasheet PTFA211801E Datasheet PDF (Download)
File Size 480.12 KB
Manufacturer Infineon
Description Thermally-Enhanced High Power RF LDMOS FET
PTFA211801E page 2 PTFA211801E page 3

PTFA211801E Overview

The PTFA211801E is a thermally-enhanced, 180-watt, internally matched LDMOS FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from 2110 to 2170 MHz. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.

PTFA211801E Key Features

  • Broadband internal matching
  • Typical two-carrier WCDMA performance at 2140
  • Average output power = 45.5 dBm
  • Linear Gain = 15.5 dB
  • Efficiency = 27.5%
  • Intermodulation distortion = -36 dBc
  • Adjacent channel power = -41 dBc
  • Typical CW performance, 2170 MHz, 30 V
  • Output power at P1dB = 180 W
  • Efficiency = 52%

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