PTFA211801F - Thermally-Enhanced High Power RF LDMOS FET

Product Overview

Infineon

Part number	PTFA211801F
Manufacturer	Infineon
File Size	257.39 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PTFA211801F Datasheet
Additional preview pages of the PTFA211801F datasheet.

The PTFA211801E and PTFA211801F are thermally-enhanced, 180-watt, internally matched LDMOS FETs intended for WCDMA applications.

Thermally-enhanced packages, Pb-free and RoHS-compliant.
Broadband internal matching.
Typical two-carrier WCDMA performance at 2140 MHz, 28 V - Average output power = 45.5 dBm - Linear Gain = 15.5 dB - Efficiency = 27.5% - Intermodulation distortion =.
36 dBc - Adjacent channel power =.
41 dBc.
Typical CW performance, 2170 MHz, 30 V - Output power at P.
1dB = 180 W - Efficiency = 52%.
Integrated ESD protection: Human Body Model.

📁 Similar Datasheet

PTFA220121M - High Power RF LDMOS Field Effect Transistor (Wolfspeed)
PTFA - Plug Type Fixed Attenuator (OPLINK)
PTFA080551E - Thermally-Enhanced High Power RF LDMOS FETs (Wolfspeed)
PTFA080551F - Thermally-Enhanced High Power RF LDMOS FETs (Wolfspeed)
PTFA142401EL - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
PTFA142401FL - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
PTFA180701E - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
PTFA180701F - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)

Other Datasheets by Infineon

Published: Feb 21, 2016 |