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PTFA211801F

PTFA211801F is Thermally-Enhanced High Power RF LDMOS FET manufactured by Infineon.
PTFA211801F datasheet preview

PTFA211801F Details

Part number PTFA211801F
Datasheet PTFA211801F Datasheet PDF (Download)
File Size 257.39 KB
Manufacturer Infineon
Description Thermally-Enhanced High Power RF LDMOS FET
PTFA211801F page 2 PTFA211801F page 3

PTFA211801F Overview

The PTFA211801E and PTFA211801F are thermally-enhanced, 180-watt, internally matched LDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier WCDMA operation from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest operation available.

PTFA211801F Key Features

  • Thermally-enhanced packages, Pb-free and RoHS-pliant
  • Broadband internal matching
  • Typical two-carrier WCDMA performance at 2140 MHz, 28 V
  • Average output power = 45.5 dBm
  • Linear Gain = 15.5 dB
  • Efficiency = 27.5%
  • Intermodulation distortion = -36 dBc
  • Adjacent channel power = -41 dBc
  • Typical CW performance, 2170 MHz, 30 V
  • Output power at P-1dB = 180 W

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