PTFA211801F Datasheet Thermally-enhanced High Power Rf Ldmos Fet

Manufacturer: Infineon

Overview: PTFA211801E PTFA211801F Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170.

Datasheet Details

Part number	PTFA211801F
Manufacturer	Infineon
File Size	257.39 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PTFA211801F-Infineon.pdf

The PTFA211801E and PTFA211801F are thermally-enhanced, 180-watt, internally matched LDMOS FETs intended for WCDMA applications.

They are characaterized for single- and two-carrier WCDMA operation from 2110 to 2170 MHz.

Thermally-enhanced packaging provides the coolest operation available.

Thermally-enhanced packages, Pb-free and RoHS-compliant.
Broadband internal matching.
Typical two-carrier WCDMA performance at 2140 MHz, 28 V - Average output power = 45.5 dBm - Linear Gain = 15.5 dB - Efficiency = 27.5% - Intermodulation distortion =.
36 dBc - Adjacent channel power =.
41 dBc.
Typical CW performance, 2170 MHz, 30 V - Output power at P.
1dB = 180 W - Efficiency = 52%.
Integrated ESD protection: Human Body Model.

Part Number	Description
PTFA211801E	Thermally-Enhanced High Power RF LDMOS FET
PTFA211001E	Thermally-Enhanced High Power RF LDMOS FET
PTFA210301E	Thermally-Enhanced High Power RF LDMOS FET
PTFA210601E	Thermally-Enhanced High Power RF LDMOS FET
PTFA210601F	Thermally-Enhanced High Power RF LDMOS FET
PTFA210701E	Thermally-Enhanced High Power RF LDMOS FET
PTFA210701F	Thermally-Enhanced High Power RF LDMOS FET
PTFA212001E	Thermally-Enhanced High Power RF LDMOS FET
PTFA212001F	Thermally-Enhanced High Power RF LDMOS FET
PTFA212002E	Thermally-Enhanced High Power RF LDMOS FET