Datasheet Details
| Part number | PTFA211801F |
|---|---|
| Manufacturer | Infineon |
| File Size | 257.39 KB |
| Description | Thermally-Enhanced High Power RF LDMOS FET |
| Datasheet |
 PTFA211801F Datasheet
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General Description
The PTFA211801E and PTFA211801F are thermally-enhanced, 180-watt, internally matched LDMOS FETs intended for WCDMA applications.
They are characaterized for single- and two-carrier WCDMA operation from 2110 to 2170 MHz.
Thermally-enhanced packaging provides the coolest operation available.
Key Features
- Thermally-enhanced packages, Pb-free and RoHS-compliant.
- Broadband internal matching.
- Typical two-carrier WCDMA performance at 2140 MHz, 28 V - Average output power = 45.5 dBm - Linear Gain = 15.5 dB - Efficiency = 27.5% - Intermodulation distortion =.
- 36 dBc - Adjacent channel power =.
- 41 dBc.
- Typical CW performance, 2170 MHz, 30 V - Output power at P.
- 1dB = 180 W - Efficiency = 52%.
- Integrated ESD protection: Human Body Model.