Datasheet4U Logo Datasheet4U.com

PTFA220121M Datasheet High Power Rf Ldmos Field Effect Transistor

Manufacturer: Infineon

Datasheet Details

Part number PTFA220121M
Manufacturer Infineon
File Size 379.06 KB
Description High Power RF LDMOS Field Effect Transistor
Datasheet PTFA220121M-Infineon.pdf

General Description

The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz.

This LDMOS device offers excellent gain, efficiency and linearity performance in a small overmolded plastic package.

PTFA220121M Package PG-SON-10 IMD (dBc) Efficiency (%) Two-tone Drive-up VDD = 28 V, IDQ = 150 mA, ƒ1 = 876.95 MHz, ƒ2 = 877.05 MHz -10 50 -15 45 Efficiency -20 40 -25 35 -30 30 -35 IMD3 25 -40 20 -45 15 -50 10 33 34 35 36 37 38 39 40 41 42 Output Power, PEP (dBm)

Key Features

  • Typical two-carrier WCDMA performance at 2140 MHz, 8 dB PAR - POUT = 33 dBm Avg - ACPR =.
  • 45.5 dBc.
  • Typical two-carrier WCDMA performance at 877 MHz, 8 dB PAR - POUT = 33 dBm Avg - ACPR =.
  • 44.5 dBc.
  • Typical CW performance, 2140 MHz, 28 V - POUT = 41.6 dBm - Efficiency = 53.5% - Gain = 15.5 dB.
  • .

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Wolfspeed Logo PTFA220121M High Power RF LDMOS Field Effect Transistor Wolfspeed

More Datasheets from Infineon

Part Number Description
PTFA220041M High Power RF LDMOS Field Effect Transistor
PTFA220081M High Power RF LDMOS Field Effect Transistor
PTFA210301E Thermally-Enhanced High Power RF LDMOS FET
PTFA210601E Thermally-Enhanced High Power RF LDMOS FET
PTFA210601F Thermally-Enhanced High Power RF LDMOS FET
PTFA210701E Thermally-Enhanced High Power RF LDMOS FET
PTFA210701F Thermally-Enhanced High Power RF LDMOS FET
PTFA211001E Thermally-Enhanced High Power RF LDMOS FET
PTFA211801E Thermally-Enhanced High Power RF LDMOS FET
PTFA211801F Thermally-Enhanced High Power RF LDMOS FET

PTFA220121M Distributor