• Part: PTFA220121M
  • Description: High Power RF LDMOS Field Effect Transistor
  • Manufacturer: Infineon
  • Size: 379.06 KB
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Datasheet Summary

High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 - 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS device offers excellent gain, efficiency and linearity performance in a small overmolded plastic package. PTFA220121M Package PG-SON-10 IMD (dBc) Efficiency (%) Two-tone Drive-up VDD = 28 V, IDQ = 150 mA, ƒ1 = 876.95 MHz, ƒ2 = 877.05 MHz -10 50 -15 45 Efficiency -20 40 -25 35 -30 30 -35 IMD3 -40 20 -45 15 -50 10 33 34 35 36 37 38 39 40 41 42 Output Power, PEP (dBm) Features - Typical two-carrier WCDMA performance at 2140 MHz, 8 dB PAR - POUT = 33 dBm Avg...