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PTFA220121M - High Power RF LDMOS Field Effect Transistor

General Description

The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz.

nsmall overmolded plastic package.

Key Features

  • Typical two-carrier WCDMA performance at 2140 MHz, 8 dB PAR - POUT = 33 dBm Avg - ACPR =.
  • 45.5 dBc.
  • Typical two-carrier WCDMA performance at 877 MHz, 8 dB PAR - POUT = 33 dBm Avg - ACPR =.
  • 44.5 dBc.
  • Typical CW performance, 2140 MHz, 28 V - POUT = 41.6 dBm - Efficiency = 53.5% - Gain = 15.5 dB.
  • Typical CW performance, 877 MHz, 28 V - POUT = 41.8 dBm - Eff.

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Datasheet Details

Part number PTFA220121M
Manufacturer Wolfspeed
File Size 612.59 KB
Description High Power RF LDMOS Field Effect Transistor
Datasheet download datasheet PTFA220121M Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PTFA220121M High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS device offers excellent gain, efficiency and linearity performance in a nsmall overmolded plastic package. PTFA220121M Package PG-SON-10 desigTwo-tone Drive-up VDD = 28 V, IDQ = 150 mA, wƒ1 = 876.95 MHz, ƒ2 = 877.05 MHz r ne-10 50 fo-15 45 dEfficiency e-20 40 d-25 35 en-30 30 m-35 IMD3 25 m-40 20 co-45 15 re-50 10 t33 34 35 36 37 38 39 40 41 42 noOutput Power, PEP (dBm) Features • Typical two-carrier WCDMA performance at 2140 MHz, 8 dB PAR - POUT = 33 dBm Avg - ACPR = –45.