The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
PTFA220121M
High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 – 2200 MHz
Description
The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS device offers excellent gain, efficiency and linearity performance in a
nsmall overmolded plastic package.
PTFA220121M Package PG-SON-10
desigTwo-tone Drive-up
VDD = 28 V, IDQ = 150 mA,
wƒ1 = 876.95 MHz, ƒ2 = 877.05 MHz
r ne-10 50
fo-15 45 dEfficiency
e-20 40
d-25 35
en-30 30
m-35
IMD3
25
m-40 20
co-45 15
re-50 10 t33 34 35 36 37 38 39 40 41 42
noOutput Power, PEP (dBm)
Features
• Typical two-carrier WCDMA performance at 2140 MHz, 8 dB PAR - POUT = 33 dBm Avg - ACPR = –45.